高压MOSFET
高压MOSFET产品型号ModeVDS(MIN)VGSID(MAx)RDS(on)(MAx)封装形式LY1N60N channel600V±30V1A9.3ΩTO92/TO126/TO251LY2N60N channel600V±30V2A4.7ΩTO251/TO252/TO251LY4N60N channel600V±30V4A2.6ΩTO251/TO252/TO251LY7N60N chann
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- 型号： 高压MOSFET
高压MOSFET
产品型号 | Mode | VDS(MIN) | VGS | ID(MAx) | RDS(on) (MAx) | 封装形式 |
LY1N60 | N channel | 600V | ±30V | 1A | 9.3Ω | TO92/TO126/TO251 |
LY2N60 | N channel | 600V | ±30V | 2A | 4.7Ω | TO251/TO252/TO251 |
LY4N60 | N channel | 600V | ±30V | 4A | 2.6Ω | TO251/TO252/TO251 |
LY7N60 | N channel | 600V | ±30V | 7A | 1.4Ω | TO220F |
LY8N60 | N channel | 600V | ±30V | 8A | 1.2Ω | TO220F |
LY10N60 | N channel | 600V | ±30V | 10A | 0.8Ω | TO220F |
LY12N60 | N channel | 600V | ±30V | 12A | 0.7Ω | TO220F |
LY13003 | BJT | 700V | 1.5A | TO126/TO92 | ||
LY1N65 | N channel | 650V | ±30V | 1A | 11Ω | TO92/TO126/TO251 |
LY2N65 | N channel | 650V | ±30V | 2A | 5Ω | TO251/TO252/TO251 |
LY4N65 | N channel | 650V | ±30V | 4A | 2.9Ω | TO251/TO252/TO251 |
LY7N65 | N channel | 650V | ±30V | 7A | 1.4Ω | TO220F |
LY8N65 | N channel | 650V | ±30V | 8A | 1.6Ω | TO220F |
LY10N65 | N channel | 650V | ±30V | 10A | 0.85Ω | TO220F |
LY12N65 | N channel | 650V | ±30V | 12A | 0.75Ω | TO220F |
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